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| LED - Chip Preliminary Radiation Infrared Type DDH 10.04.2007 Technology AlGaAs/AlGaAs ELC-870-12 rev. 02/07 Electrodes P (anode) up 650 O110 typ. dimensions (m) typ. thickness 160 (+70/-30) m 480 25 LED-07 anode gold alloy, 1.5 m cathode gold alloy, 0.5 m dotted, 25% covered Optical and Electrical Characteristics Tamb = 25C, unless otherwise specified Test Parameter conditions Forward voltage Forward voltage3 Reverse voltage Radiant power1 Radiant power2 Radiant power3 Radiant intensity1 Radiant intensity3 Peak wavelength Spectral bandwidth at 50% Switching time 1 2 Symbol VF VF VR e e e e e p 0.5 tr , t f Min Typ 1.3 1.6 Max 1.6 Unit V V V IF = 20 mA IF = 300 mA IR = 100 A IF = 20 mA IF = 20 mA IF = 300 mA IF = 20 mA IF = 300 mA IF = 20 mA IF = 20 mA IF = 20 mA 5 2.8 3.7 7.0 50 0.75 1.0 13.5 860 870 45 10/25 880 mW mW mW mW/sr mW/sr nm nm ns Measured on bare chip on TO-18 header Measured on epoxy covered chip on TO-18 header 3 Measured on bare chip on TO-18 header and heat sink, 10s current flow (information only) Labeling Type EL-870-12 Lot N e(typ) [mW] VF(typ) [V] Quantity Packing: Chips on adhesive film with wire-bond side on top Note: All measurements carried out with EPIGAP equipment EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1 |
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